, li ne. silicon planar zener diodes bzx85c 2v7 to 51v do-41 1.3w these zeners are best suited for industrial purpose, military & space applications. when hermetically sealed in glass with double stud. this passivated chip provides excellent stability & reliability. absolute maximum ratings (ta=25 deg c) description power dissipation (1) surge power dissipation pulse width =10ms operating and storage junction temperature range maximum lead temperature for soldering during 10 sec @ 4mm from case thermal resistance junction to ambient (1) forward voltage @ if=200ma 11) on infinite heatsink with symbol pta ps tj.tstg tl rth(j-a) vf value 1.3 10 -55to+175 230 115.4 1.0 unit w w degc degc deg c/mw v 4mm lead length electrical characteristics (ta=25 deg c unless otherwise specified) device bzx85c 2v7 bzx85c 3vo bzx85c 3v3 bzx85c 3v6 bzx85c 3v9 bzx85c 4v3 bzx85c 4v7 bzx85c 5v1 bzx85c sv6 bzx85c 6v2 bzx85c 6v8 bzx85c 7v5 bzx85c 8v2 bzx85c 9v1 bzx85c10 bzx85c11 bzx85c 12 bzx85c13 bzx85c 15 bzx85c 16 BZX85C18 bzx85c 20 bzx85c 22 bzx85c 24 v2t @izt* min max (v) (v) 2.50 2.90 2.80 3.20 3.10 3.50 3.40 3.80 3.70 4.10 4.00 4.60 4.40 5.00 4.80 5.40 5.20 6.00 5.80 6.60 6.40 7.20 7.00 7.90 7.70 8.70 8.50 9.60 9.40 10.60 10.40 11.60 11.40 12.70 12.40 14.10 13.80 15.60 15.30 17.10 16.80 19.10 18.80 21.20 20.80 23,30 22.80 25.60 rzt @izt* max (ohm) 20 20 20 20 15 13 13 10 7 4 3.5 3 5 5 7.5 8 9 10 15 15 20 24 25 25 izt rzk izk @izk (ma) 80 80 80 70 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 max (ohm) 400 400 400 500 500 500 500 500 400 300 300 200 200 200 200 300 350 400 500 500 500 600 600 600 (ma) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 temp. coeff of zener voltage typ (%/deg c) -0.07 -0.07 -0.06 -0.06 -0.05 -0.03 -0.01 +0.01 +0.03 +0.04 +0.05 +0.05 +0.06 +0.06 +0.07 +0.07 +0.07 +0.07 +0.08 +0.08 +0.08 +0.08 +0.08 +0.08 ir ta= 25 deg c max (ua) 150 100 40 20 10 3.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0,5 0.5 0.5 0.5 0.5 0.5 0.5 @ isodegc max (ua) 300 300 200 50 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 vr (v) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 3.0 4.0 4.5 6.2 6.8 7.0 8.2 9.1 10 11 12 13 15 16 18 izm (ma) 370 340 320 290 280 250 215 200 190 170 155 140 130 120 105 97 88 79 71 66 62 56 52 47 izsm## (ma) 2874 2604 2381 2193 2033 1812 1667 1543 1389 1263 1157 1055 958 868 786 718 656 591 534 487 436 393 358 326 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (ta=2s deg c unless otherwise specified! device bzx85c 27 bzx85c 30 bzx85c 33 bzx85c 36 bzx85c 39 bzx85c 43 bzx85c 47 bzx85c 51 vzt @izt* min (v) 25.10 28.00 31.00 34.00 37.00 40.00 44.00 48.00 rzt @izt* max max (v) (ohm) 28.90 30 32.00 30 35.00 35 38.00 40 41.00 50 46.00 50 50.00 90 54.00 115 izt rzk izk @izk t b 1 q t | ?4 a >? notes 1 . cathode is marked by band. 2. all dimensions are in mm. dim a b c d min 27.90 4.06 0.71 2.03 max ! | i 5.51 0.87 2.72
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